Boron nitride film was deposited on h1 0 0i-oriented silicon substrate by hot filament assisted chemical\nvapor deposition. The B[N(CH3)2]3 (Tris(dimetylamino)borane, TDMAB) was used as the single source precursor\nboth for boron and nitride, and ammonia gas was used as the extra source to increase the N concentration in the films.\nElemental composition of the films deposited under different filament temperatures were measured by energy dispersive\nX-ray (EDX) analysis, and the structure of the films were measured by X-ray diffraction (XRD) and Fourier transform\ninfrared spectroscopy (FT-IR). The boron nitride films deposited under lower filament temperature was\namorphous, while BN films contain hexagonal structure were deposited at higher filament temperature. To verify\nwhether the films can be applied to the microforming die, a ball on disk test was carried out using pure titanium ball\nas the counterpart to investigate the interfacial behavior between the films and pure titanium. The results show that the\nreaction between the films and pure titanium was low as there was no titanium adhesion on the wear track when the\nfilm was remained.
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